Sanan Semiconductor has entered into a Research Partnership with the Institute for Power Electronics (LEE) at FAU Erlangen-Nürnberg, one of the most innovative universities worldwide. This research will focus on advanced innovation in Power Electronic systems focusing on SiC technology.
“Sanan Semiconductor is a vertically integrated SiC supplier with inhouse development and manufacturing of SiC substrates, epitaxial wafers, Diode/Mosfet dies and packaged products. This partnership with one of Germany’s leading research institutes for SiC puts Sanan Semiconductor in a strong position”, says Mr. Tony Chiang, CEO of Sanan Semiconductor. Dr. Ming-Che Kao, General Manager of Sanan Europe GmbH says, “Europe is a key market for us, and this partnership aims at strengthening our system innovation”.
“Compared to traditional Silicon-based technologies, SiC offers significant efficiency and power density improvements in various applications. Despite the increasing adoption of SiC in power electronic applications, several system-level barriers still inhibit the full potential of SiC. This collaboration is a step towards overcoming these barriers”, says Dr. Ajay Poonjal Pai, Head of WBG Innovation.
Prof. Martin März, Director of the institute says, “We are pleased to have a strong partner in Sanan, whose innovative SiC devices will enable us to advance into new performance regions”.
