SiC Diode-Sanan Semiconductor

Introduction

Superior surge and avalanche characteristics

Sanan Semiconductor has a mature portfolio of Silicon Carbide Schottky Barrier Diodes (SBDs).

Utilizing an innovative hybrid PiN Schottky (MPS) structure and substrate thinning technology, Sanan Semiconductor's SiC SBDs offer a competitive price/performance ratio while meeting the industry's most stringent reliability requirements, such as HV-H3TRB.

Based on 20 years of superior compound semiconductor manufacturing experience, delivering world-class Silicon Carbide SBD devices with extremely low failure rates, complete vertical integration (front-end and back-end), and comprehensive in-circuit and reliability testing services, Sanan Semiconductor provides a true "one-stop customer service solution" for the power electronics industry.

Part Number	Type	Qualification	V_DC (V)min	I_F (A)max	Generation	V_F (V)@T_j=25℃	V_F (V)@T_j=175℃	I_FSM (A)@Tc=25℃,tp=10ms	I_R (uA)@Tj=25℃	Q_C (nC)	P_tot (W)@Tc=25℃	T_j (℃)	Configuration	Package
SDS065J020B4	SiC SBD Bare die	Industry	650	20	G4	1.3	1.5	122	5	59	-	-55℃~175℃	single chip	Bare die
SDS170J025B5	SiC SBD Bare die	Industry	1700	25	G5	1.4	2.15	432	3	152	-	-55℃~175℃	single chip	Bare die
SDS120J040B5	SiC SBD Bare die	Industry	1200	40	G5	1.45	2.15	395	5	166	-	-55℃~175℃	single chip	Bare die
SDS120J030B5	SiC SBD Bare die	Industry	1200	30	G5	1.4	2	310	5	137	-	-55℃~175℃	single chip	Bare die
SDS120J020B5	SiC SBD Bare die	Industry	1200	20	G5	1.4	2	206	5	95	-	-55℃~175℃	single chip	Bare die
SDS120J015B5	SiC SBD Bare die	Industry	1200	15	G5	1.4	2	154	5	70	-	-55℃~175℃	single chip	Bare die
SDS120J010B5	SiC SBD Bare die	Industry	1200	10	G5	1.4	2	118	5	48	-	-55℃~175℃	single chip	Bare die
ADS065J010B4	SiC SBD Bare die	Automotive	650	10	G4	1.29	1.46	80	1	32	-	-55℃~175℃	single chip	Bare die
SDS065J010B4	SiC SBD Bare die	Industry	650	10	G4	1.27	1.45	68	5	28	-	-55℃~175℃	single chip	Bare die
SDS065J008B4	SiC SBD Bare die	Industry	650	8	G4	1.27	1.48	56	4	21	-	-55℃~175℃	single chip	Bare die
SDS065J006B4	SiC SBD Bare die	Industry	650	6	G4	1.27	1.5	46	3	20	-	-55℃~175℃	single chip	Bare die
SDS065J004B4	SiC SBD Bare die	Industry	650	4	G4	1.27	1.45	32	3	11	-	-55℃~175℃	single chip	Bare die
SDS065J050B3	SiC SBD Bare die	Industry	650	50	G3	1.35	1.55	360	5	138	-	-55℃~175℃	single chip	Bare die
SDS065J040B3	SiC SBD Bare die	Industry	650	40	G3	1.35	1.55	252	3	107	-	-55℃~175℃	single chip	Bare die
ADS065J040B3	SiC SBD Bare die	Automotive	650	40	G3	1.35	1.55	252	3	107	-	-55℃~175℃	single chip	Bare die
SDS065J030B3	SiC SBD Bare die	Industry	650	30	G3	1.35	1.55	214	3	83	-	-55℃~175℃	single chip	Bare die
SDS065J020B3	SiC SBD Bare die	Industry	650	20	G3	1.35	1.65	150	2	55	-	-55℃~175℃	single chip	Bare die
ADS065J020B3	SiC SBD Bare die	Automotive	650	20	G3	1.3 5	1.65	150	2	55	-	-55℃~175℃	single chip	Bare die
SDS065J016B3	SiC SBD Bare die	Industry	650	16	G3	1.3 0	1.55	135	1	44	-	-55℃~175℃	single chip	Bare die
ADS065J012B3	SiC SBD Bare die	Automotive	650	12	G3	1.3 0	1.55	108	1	34	-	-55℃~175℃	single chip	Bare die
SDS065J012B3	SiC SBD Bare die	Industry	650	12	G3	1.3 0	1.55	108	1	34	-	-55℃~175℃	single chip	Bare die
ADS065J010B3	SiC SBD Bare die	Automotive	650	10	G3	1.3 0	1.55	80	1	29	-	-55℃~175℃	single chip	Bare die
SDS065J010B3	SiC SBD Bare die	Industry	650	10	G3	1.3 0	1.55	80	1	29	-	-55℃~175℃	single chip	Bare die
ADS065J008B3	SiC SBD Bare die	Automotive	650	8	G3	1.3 0	1.55	65	1	22	-	-55℃~175℃	single chip	Bare die
SDS065J008B3	SiC SBD Bare die	Industry	650	8	G3	1.3 0	1.55	65	1	22	-	-55℃~175℃	single chip	Bare die
SDS065J006B3	SiC SBD Bare die	Industry	650	6	G3	1.3 0	1.55	48	1	17	-	-55℃~175℃	single chip	Bare die
SDS065J004B3	SiC SBD Bare die	Industry	650	4	G3	1.3 0	1.55	36	1	13	-	-55℃~175℃	single chip	Bare die
SDS065J002B3	SiC SBD Bare die	Industry	650	2	G3	1.3 0	1.55	21	1	6.8	-	-55℃~175℃	single chip	Bare die
ADS065J001B3	SiC SBD Bare die	Automotive	650	1	G3	1.3 0	1.55	12	1	3.2	-	-55℃~175℃	single chip	Bare die
SDS120J060B3	SiC SBD Bare die	Industry	1200	60	G3	1.35	1.8	652	5	350	-	-55℃~175℃	single chip	Bare die
ADS120J050B3	SiC SBD Bare die	Automotive	1200	50	G3	1.35	1.75	504	5	304	-	-55℃~175℃	single chip	Bare die
SDS120J050B3	SiC SBD Bare die	Industry	1200	50	G3	1.35	1.75	511	5	304	-	-55℃~175℃	single chip	Bare die
SDS120J040B3	SiC SBD Bare die	Industry	1200	40	G3	1.4 0	1.95	348	5	182	-	-55℃~175℃	single chip	Bare die
SDS120J030B3	SiC SBD Bare die	Industry	1200	30	G3	1.3 0	1.7	290	3	175	-	-55℃~175℃	single chip	Bare die
SDS120J027B3	SiC SBD Bare die	Industry	1200	27	G3	1.4 0	2 .00	200	2	126	-	-55℃~175℃	single chip	Bare die
ADS120J020B3	SiC SBD Bare die	Automotive	1200	20	G3	1.35	1.85	180	3	108	-	-55℃~175℃	single chip	Bare die
SDS120J020B3	SiC SBD Bare die	Industry	1200	20	G3	1.35	1.85	180	3	108	-	-55℃~175℃	single chip	Bare die
SDS120J015B3	SiC SBD Bare die	Industry	1200	15	G3	1.35	1.8	140	2	82	-	-55℃~175℃	single chip	Bare die
SDS120J010B3	SiC SBD Bare die	Industry	1200	10	G3	1.35	1.80	103	2	55	-	-55℃~175℃	single chip	Bare die
ADS120J005B3	SiC SBD Bare die	Automotive	1200	5	G3	1.35	1.85	55	1	28	-	-55℃~175℃	single chip	Bare die
SDS120J005B3	SiC SBD Bare die	Industry	1200	5	G3	1.35	1.85	55	1	28	-	-55℃~175℃	single chip	Bare die
SDS120J003B3	SiC SBD Bare die	Industry	1200	3	G3	1.35	1.85	40	1	17	-	-55℃~175℃	single chip	Bare die
SDS120J002B3	SiC SBD Bare die	Industry	1200	2	G3	1.35	1.75	28	1	12	-	-55℃~175℃	single chip	Bare die
ADS120J001B3	SiC SBD Bare die	Automotive	1200	1	G3	1.35	1.8 0	15	1	6.4	-	-55℃~175℃	single chip	Bare die
SDS120J040G5	SiC SBD Discrete Device	Industry	1200	40	G5	1.4	2	206 per leg	5	95	278	-55℃~175℃	dual chip	TO247-3L
SDS120J030G5	SiC SBD Discrete Device	Industry	1200	30	G5	1.4	2	154 per leg	5	70	227	-55℃~175℃	dual chip	TO247-3L
SDS120J020E5	SiC SBD Discrete Device	Industry	1200	20	G5	1.4	2.00	194	5	102	263	-55℃~175℃	dual chip	TO263-2L
SDS120J020G5	SiC SBD Discrete Device	Industry	1200	20	G5	1.4	2	118 per leg	5	48	174	-55℃~175℃	dual chip	TO247-3L
SDS065J020W4	SiC SBD Discrete Device	Industry	650	20	G4	1.3	1.5	130	5	61	68	-55℃~175℃	single chip	TO3PF-3L
SDS065J050E3	SiC SBD Discrete Device	Industry	650	50	G3	1.35	1.6	330	5	138	348	-55℃~175℃	single chip	TO263-2L
ADS065J020D3	SiC SBD Discrete Device	Automotive	650	20	G3	1.35	1.7	110	2	55	178	-55℃~175℃	single chip	TO252-2L
SDS065J016F3	SiC SBD Discrete Device	Industry	650	16	G3	1.3	1.55	121	1	43	53	-55℃~175℃	single chip	TO220F-2L
SDS065J012N3	SiC SBD Discrete Device	Industry	650	12	G3	1.35	1.6	111	1	36	90	-55℃~175℃	single chip	TO220N-2L
SDS065J008E3	SiC SBD Discrete Device	Industry	650	8	G3	1.3	1.55	65	1	22	107	-55℃~175℃	single chip	TO263-2L
SDS170J025H5	SiC SBD Discrete Device	Industry	1700	25	G5	1.4	2.15	388	3	191	428	-55℃~175℃	single chip	TO247-2L
SDS120J040J5	SiC SBD Discrete Device	Industry	1200	40	G5	1.4	2	417	5	196	577	-55℃~175℃	single chip	TO247-2L
SDS120J040H5	SiC SBD Discrete Device	Industry	1200	40	G5	1.45	2.15	395	5	166	320	-55℃~175℃	single chip	TO247-2L
SDS120J030H5	SiC SBD Discrete Device	Industry	1200	30	G5	1.4	2	310	5	137	375	-55℃~175℃	single chip	TO247-2L
SDS120J020H5	SiC SBD Discrete Device	Industry	1200	20	G5	1.4	2	206	5	95	294	-55℃~175℃	single chip	TO247-2L
SDS120J015H5	SiC SBD Discrete Device	Industry	1200	15	G5	1.4	2	154	5	70	234	-55℃~175℃	single chip	TO247-2L
SDS120J010C5	SiC SBD Discrete Device	Industry	1200	10	G5	1.4	2	118	5	48	118	-55℃~175℃	single chip	TO220-2L
SDS065J010C4	SiC SBD Discrete Device	Industry	650	10	G4	1.27	1.45	68	5	28	115	-55℃~175℃	single chip	TO220-2L
SDS065J008D4	SiC SBD Discrete Device	Industry	650	8	G4	1.27	1.45	56	4	21	95	-55℃~175℃	single chip	TO252-2L
SDS065J006D4	SiC SBD Discrete Device	Industry	650	6	G4	1.27	1.5	46	3	20	81	-55℃~175℃	single chip	TO252-2L
SDS065J006N4	SiC SBD Discrete Device	Industry	650	6	G4	1.27	1.5	46	3	20	63	-55℃~175℃	single chip	TO220N-2L
SDS065J006C4	SiC SBD Discrete Device	Industry	650	6	G4	1.27	1.5	46	3	20	88	-55℃~175℃	single chip	TO220-2L
SDS065J004D4	SiC SBD Discrete Device	Industry	650	4	G4	1.27	1.45	28	3	11	65	-55℃~175℃	single chip	TO252-2L
SDS065J004C4	SiC SBD Discrete Device	Industry	650	4	G4	1.27	1.45	32	3	11	70	-55℃~175℃	single chip	TO220-2L
SLS065J100A	SiC SBD Module	Industry	650	100*2	G3	1.45	1.7 0	700	10	275	394	-55℃~175℃	ten-chip	SOT-227
SDS065J050H3	SiC SBD Discrete Device	Industry	650	50	G3	1.35	1.6 0	337	5	138	348	-55℃~175℃	single chip	TO247-2L
ADS065J040G3	SiC SBD Discrete Device	Automotive	650	40	G3	1.35	1.7 0	140 per leg	2	55	178	-55℃~175℃	dual chip	TO247-3L
SDS065J040G3	SiC SBD Discrete Device	Industry	650	40	G3	1.35	1.7 0	140 per leg	2	55	178	-55℃~175℃	dual chip	TO247-3L
SDS065J040H3	SiC SBD Discrete Device	Industry	650	40	G3	1.35	1.55	252	3	107	319	-55℃~175℃	single chip	TO247-2L
SDS065J030H3	SiC SBD Discrete Device	Industry	650	30	G3	1.35	1.55	214	3	83	250	-55℃~175℃	single chip	TO247-2L
SDS065J030G3	SiC SBD Discrete Device	Industry	650	30	G3	1.3 0	1.55	135 per leg	1	44	159	-55℃~175℃	dual chip	TO247-3L
SDS065J020G3	SiC SBD Discrete Device	Industry	650	20	G3	1.3 0	1.55	80 per leg	1	29	119	-55℃~175℃	dual chip	TO247-3L
SDS065J020D3	SiC SBD Discrete Device	Industry	650	20	G3	1.35	1.7 0	110	2	55	178	-55℃~175℃	single chip	TO252-2L
SDS065J020W3	SiC SBD Discrete Device	Industry	650	20	G3	1.3 0	1.55	80 per leg	1	29	57	-55℃~175℃	dual chip	TO3PF-3L
ADS065J020E3	SiC SBD Discrete Device	Automotive	650	20	G3	1.35	1.7 0	140	2	55	178	-55℃~175℃	single chip	TO263-2L
ADS065J020G3	SiC SBD Discrete Device	Automotive	650	20	G3	1.3 0	1.55	80 per leg	1	29	119	-55℃~175℃	dual chip	TO247-3L
ADS065J020C3	SiC SBD Discrete Device	Automotive	650	20	G3	1.35	1.7 0	140	2	55	178	-55℃~175℃	single chip	TO220-2L
ADS065J020H3	SiC SBD Discrete Device	Automotive	650	20	G3	1.35	1.7 0	140	2	55	178	-55℃~175℃	single chip	TO247-2L
SDS065J020C3	SiC SBD Discrete Device	Industry	650	20	G3	1.35	1.7 0	140	2	55	178	-55℃~175℃	single chip	TO220-2L
SDS065J020H3	SiC SBD Discrete Device	Industry	650	20	G3	1.35	1.7 0	140	2	55	178	-55℃~175℃	single chip	TO247-2L
ADS065J016G3	SiC SBD Discrete Device	Automotive	650	16	G3	1.3 0	1.55	65 per leg	1	22	105	-55℃~175℃	dual chip	TO247-3L
SDS065J016C3	SiC SBD Discrete Device	Industry	650	16	G3	1.3 0	1.55	135	1	44	156	-55℃~175℃	single chip	TO220-2L
SDS065J016H3	SiC SBD Discrete Device	Industry	650	16	G3	1.3 0	1.55	135	1	44	156	-55℃~175℃	single chip	TO247-2L
SDS065J016G3	SiC SBD Discrete Device	Industry	650	16	G3	1.3 0	1.55	65 per leg	1	22	105	-55℃~175℃	dual chip	TO247-3L
SDS065J012S3	SiC SBD Discrete Device	Industry	650	12	G3	1.3 0	1.55	108	1	34	208	-55℃~175℃	single chip	DFN8*8-4L
SDS065J012C3	SiC SBD Discrete Device	Industry	650	12	G3	1.3 0	1.55	108	1	34	147	-55℃~175℃	single chip	TO220-2L
SDS065J010E3	SiC SBD Discrete Device	Industry	650	10	G3	1.3 0	1.55	80	1	29	120	-55℃~175℃	single chip	TO263-2L
SDS065J010D3	SiC SBD Discrete Device	Industry	650	10	G3	1.3 0	1.55	74	1	29	109	-55℃~175℃	single chip	TO252-2L
SDS065J010N3	SiC SBD Discrete Device	Industry	650	10	G3	1.3 0	1.55	80	1	29	87	-55℃~175℃	single chip	TO220N-2L
SDS065J010C3	SiC SBD Discrete Device	Industry	650	10	G3	1.3 0	1.55	80	1	29	120	-55℃~175℃	single chip	TO220-2L
SDS065J010S3	SiC SBD Discrete Device	Industry	650	10	G3	1.3	1.55	80	1	29	187	-55℃~175℃	single chip	DFN8*8-4L
SDS065J008S3	SiC SBD Discrete Device	Industry	650	8	G3	1.3 0	1.55	65	1	22	125	-55℃~175℃	single chip	DFN8*8-4L
SDS065J008D3	SiC SBD Discrete Device	Industry	650	8	G3	1.3 0	1.55	67	1	22	100	-55℃~175℃	single chip	TO252-2L
SDS065J008N3	SiC SBD Discrete Device	Industry	650	8	G3	1.3 0	1.55	65	1	22	71	-55℃~175℃	single chip	TO220N-2L
SDS065J008C3	SiC SBD Discrete Device	Industry	650	8	G3	1.3 0	1.55	65	1	22	107	-55℃~175℃	single chip	TO220-2L
SDS065J006S3	SiC SBD Discrete Device	Industry	650	6	G3	1.3 0	1.55	48	1	17	115	-55℃~175℃	single chip	DFN8*8-4L
SDS065J006C3	SiC SBD Discrete Device	Industry	650	6	G3	1.3 0	1.55	48	1	17	91	-55℃~175℃	single chip	TO220-2L
SDS065J006D3	SiC SBD Discrete Device	Industry	650	6	G3	1.3 0	1.55	48	1	17	88	-55℃~175℃	single chip	TO252-2L
SDS065J006E3	SiC SBD Discrete Device	Industry	650	6	G3	1.3 0	1.55	48	1	17	91	-55℃~175℃	single chip	TO263-2L
SDS065J004C3	SiC SBD Discrete Device	Industry	650	4	G3	1.3 0	1.55	36	1	13	71	-55℃~175℃	single chip	TO220-2L
SDS065J004D3	SiC SBD Discrete Device	Industry	650	4	G3	1.3 0	1.55	36	1	13	71	-55℃~175℃	single chip	TO252-2L
SDS065J002D3	SiC SBD Discrete Device	Industry	650	2	G3	1.3 0	1.55	21	1	6.8	61	-55℃~175℃	single chip	TO252-2L
ADS16B3	SiC SBD Discrete Device	Automotive	650	1	G3	1.3 0	1.55	12	1	3.2	7.7	-55℃~175℃	single chip	SMBF
SLS120J100A	SiC SBD Module	Industry	1200	100*2	G3	1.4 0	1.9 0	800	20	539	535	-55℃~175℃	ten-chip	SOT-227
SLS120J080A	SiC SBD Module	Industry	1200	80*2	G3	1.4 0	1.9 0	640	15	446	428	-55℃~175℃	eight-chip	SOT-227
SLS120J060A	SiC SBD Module	Industry	1200	60*2	G3	1.4 0	1.9 0	480	10	323	312	-55℃~175℃	six-chip	SOT-227
SDS120J060G3	SiC SBD Discrete Device	Industry	1200	60	G3	1.3 0	1.85	291 per leg	3	175	395	-55℃~175℃	dual chip	TO247-3L
SDS120J060H3	SiC SBD Discrete Device	Industry	1200	60	G3	1.35	1.8	652	5	350	625	-55℃~175℃	single chip	TO247-2L
SDS120J050H3	SiC SBD Discrete Device	Industry	1200	50	G3	1.35	1.75	504	5	304	555	-55℃~175℃	single chip	TO247-2L
SDS120J040G3	SiC SBD Discrete Device	Industry	1200	40	G3	1.35	1.85	180 per leg	3	108	242	-55℃~175℃	dual chip	TO247-3L
SDS120J040H3	SiC SBD Discrete Device	Industry	1200	40	G3	1.4 0	1.95	365	5	182	428	-55℃~175℃	single chip	TO247-2L
SDS120J030G3	SiC SBD Discrete Device	Industry	1200	30	G3	1.35	1.85	140 per leg	2	82	214	-55℃~175℃	dual chip	TO247-3L
SDS120J030H3	SiC SBD Discrete Device	Industry	1200	30	G3	1.3 0	1.85	291	3	175	395	-55℃~175℃	single chip	TO247-2L
SDS120J027H3	SiC SBD Discrete Device	Industry	1200	27	G3	1.4 0	2 .00	200	2	126	312	-55℃~175℃	single chip	TO247-2L
ADS120J020C3	SiC SBD Discrete Device	Automotive	1200	20	G3	1.35	1.85	180	3	108	283	-55℃~175℃	single chip	TO220-2L
ADS120J020H3	SiC SBD Discrete Device	Automotive	1200	20	G3	1.35	1.85	180	3	108	268	-55℃~175℃	single chip	TO247-2L
SDS120J020G3	SiC SBD Discrete Device	Industry	1200	20	G3	1.35	1.85	103 per leg	2	55	180	-55℃~175℃	dual chip	TO247-3L
SDS120J020H3	SiC SBD Discrete Device	Industry	1200	20	G3	1.35	1.85	180	3	108	268	-55℃~175℃	single chip	TO247-2L
SDS120J015C3	SiC SBD Discrete Device	Industry	1200	15	G3	1.35	1.85	140	2	82	242	-55℃~175℃	single chip	TO220-2L
SDS120J015H3	SiC SBD Discrete Device	Industry	1200	15	G3	1.35	1.85	140	2	82	234	-55℃~175℃	single chip	TO247-2L
SDS120J010G3	SiC SBD Discrete Device	Industry	1200	10	G3	1.35	1.85	55 per leg	1	28	113	-55℃~175℃	dual chip	TO247-3L
SDS120J010D3	SiC SBD Discrete Device	Industry	1200	10	G3	1.35	1.85	103	2	55	187	-55℃~175℃	single chip	TO252-2L
SDS120J010C3	SiC SBD Discrete Device	Industry	1200	10	G3	1.35	1.85	103	2	55	187	-55℃~175℃	single chip	TO220-2L
SDS120J010E3	SiC SBD Discrete Device	Industry	1200	10	G3	1.35	1.85	103	2	55	187	-55℃~175℃	single chip	TO263-2L
SDS120J010H3	SiC SBD Discrete Device	Industry	1200	10	G3	1.35	1.85	103	2	55	180	-55℃~175℃	single chip	TO247-2L
ADS120J005D3	SiC SBD Discrete Device	Automotive	1200	5	G3	1.35	1.85	55	1	28	134	-55℃~175℃	single chip	TO252-2L
SDS120J005C3	SiC SBD Discrete Device	Industry	1200	5	G3	1.35	1.85	55	1	28	134	-55℃~175℃	single chip	TO220-2L
SDS120J005D3	SiC SBD Discrete Device	Industry	1200	5	G3	1.35	1.85	55	1	28	134	-55℃~175℃	single chip	TO252-2L
SDS120J003D3	SiC SBD Discrete Device	Industry	1200	3	G3	1.35	1.85	38	1	17	96	-55℃~175℃	single chip	TO252-2L
SDS120J002C3	SiC SBD Discrete Device	Industry	1200	2	G3	1.35	1.85	28	1	12	87	-55℃~175℃	single chip	TO220-2L
SDS120J002D3	SiC SBD Discrete Device	Industry	1200	2	G3	1.35	1.85	28	1	12	87	-55℃~175℃	single chip	TO252-2L
ADS12B3	SiC SBD Discrete Device	Automotive	1200	1	G3	1.35	1.8 0	15	1	6.4	7.9	-55℃~175℃	single chip	SMBF