SiC MOSFET-Sanan Semiconductor

Introduction

Excellent performance, Sanan manufacturing platform

Silicon carbide MOSFETs are the core components of next-generation energy conversion systems. With excellent switching characteristics and high temperature DC performance, they bring significant advantages such as miniaturization, lightweight and high integration to system design.

Sanan Semiconductor relies on advanced technology and large-scale manufacturing experience, and strictly follows industry standards to create high-performance silicon carbide MOSFET product series.In terms of manufacturing process, Sanan has achieved low resistance ohmic contact, optimized dopant activation process and stable gate oxidation treatment through mature mass production technology to ensure product consistency and reliability.

At present, Sanan standard manufacturing platform has passed a number of rigorous tests:

The 1200V 16mΩ silicon carbide MOSFET has passed the AEC-Q101 certification and has been verified in the customer module of new energy vehicles;

Industrial grade 1700V 1Ω and 1200V 32mΩ silicon carbide MOSFETs have achieved stable shipments in the photovoltaic and charging pile fields, and their performance has been recognized by customers.

With large-scale manufacturing capability as the core, Sanan continues to provide high-standard silicon carbide MOSFET solutions for various fields.

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃ (mΩ)	R_DS(on)@T_j=175℃ (mΩ)	T_{j (max)} (℃)	Package
SMS1200008X	Evaluation	SiC MOSFET Discrete device	Industry	1200	223	8	15	175	TO247-4L Plus
AMS0750011B	Active	SiC MOSFET Bare die	Automotive	1200	142	11	17	175	Bare die
AMS0750011V	Evaluation	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	SAPKG-9L
AMS0750011M	Active	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	TO247-4L
SMS0650065B	Active	SiC MOSFET Bare die	Industry	650	41	65	80	175	Bare die
SMS0650065M	Active	SiC MOSFET Discrete device	Industry	650	41	65	80	175	TO247-4L
SMS1200040B2	Evaluation	SiC MOSFET Bare die	Industry	1200	48	40	66	175	Bare die
AMS1200040B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	48	40	66	175	Bare die
AMS1200040M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	48	40	66	175	TO247-4L
SMS1200040M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	48	40	66	175	TO247-4L
AMS1200075P	Active	SiC MOSFET Discrete device	Automotive	1200	35	75	100	175	TO263-7L
AMS1200075B	Active	SiC MOSFET Bare die	Automotive	1200	41	75	105	175	Bare die
AMS1200075K	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-3L
AMS1200075M	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-4L
SMS1200075M	Active	SiC MOSFET Discrete device	Industry	1200	41	75	105	175	TO247-4L
AMS1200060B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	33	60	112	175	Bare die
AMS1200060V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	SAPKG-9L
AMS1200060M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	TO247-4L
SMS1200032B2	Evaluation	SiC MOSFET Bare die	Industry	1200	58	32	48	175	Bare die
SMS1200032M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	58	32	48	175	TO247-4L
AMS1200032M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	TO247-4L
AMS1200032B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	58	32	48	175	Bare die
SMS1200032B	Active	SiC MOSFET Bare die	Industry	1200	77	32	45	175	Bare die
AMS1200032B	Active	SiC MOSFET Bare die	Automotive	1200	77	32	45	175	Bare die
AMS1200032V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	SAPKG-9L
SMS1200032MA	Evaluation	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4LA
AMS1200032M	Active	SiC MOSFET Discrete device	Automotive	1200	77	32	45	175	TO247-4L
SMS1200032M	Active	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4L
SMS1200020B	Active	SiC MOSFET Bare die	Industry	1200	111	20	37	175	Bare die
SMS1200020M	Active	SiC MOSFET Discrete device	Industry	1200	111	20	37	175	TO247-4L
AMS1200018B	Active	SiC MOSFET Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200018MA	Evaluation	SiC MOSFET Discrete device	Automotive	1200	124	18	30	175	TO247-4LA
AMS1200013B3	Active	SiC MOSFET Bare die	Automotive	1200	160	13	18	175	Bare die
AMS1200013M3	Evaluation	SiC MOSFET Discrete device	Automotive	1200	160	13	18	175	TO247-4L
SMS1701000B	Active	SiC MOSFET Bare die	Industry	1700	6.8	1000	1500	175	Bare die
SMS1701000K	Active	SiC MOSFET Discrete device	Industry	1700	6.8	1000	1500	175	TO247-3L
AMS0650050B	Active	SiC MOSFET Bare die	Automotive	650	47	50	62	175	Bare die
AMS0650050B2	Evaluation	SiC MOSFET Bare die	Automotive	650	44	50	66	175	Bare die
SMS0650050Y	Evaluation	SiC MOSFET Discrete device	Industry	650	47	50	62	175	TOLL
AMS0650050P	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO263-7L
AMS0650050V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	44	50	66	175	SAPKG-9L
AMS0650050V	Evaluation	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	SAPKG-9L
AMS0650050M	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO247-4L
AMS0650035B	Active	SiC MOSFET Bare die	Automotive	650	60	35	49	175	Bare die
SMS0650035Y	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TOLL
SMS0650035P	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TO263-7L
AMS0650035V	Evaluation	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	SAPKG-9L
AMS0650035M	Active	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	TO247-4L
AMS0650027B2	Evaluation	SiC MOSFET Bare die	Automotive	650	81	27	32	175	Bare die
SMS0650027B	Active	SiC MOSFET Bare die	Industry	650	78	27	49	175	Bare die
AMS0650027V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	81	27	32	175	SAPKG-9L
AMS0650027V	Evaluation	SiC MOSFET Discrete device	Automotive	650	78	27	49	175	SAPKG-9L
SMS0650027P	Evaluation	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO263-7L
SMS0650027M	Active	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO247-4L