SiC MOSFET-Sanan Semiconductor

Introduction

Excellent switching and high temperature DC characteristics

Silicon carbide MOSFETs are core components of next-generation energy conversion systems, enabling key system benefits such as miniaturization, lighter weight and higher integration.

Sanan Semiconductor has integrated global scientific research wisdom and local mass production experience in the development of Silicon Carbide MOSFET technology. Manufacturing process challenges, such as low resistance ohmic contacts, appropriately activated dopants in ion implantation/annealing, and optimized gate oxidation, have all been addressed.

By independently mastering many core technologies, Sanan Semiconductor's automotive-grade 1200V/16mΩ silicon carbide MOSFETs have overcome reliability issues and passed AEC-Q101 certification, and have been validated in the modules of key new energy automotive customers; and industrial-grade 1700V/1Ω and 1200V/32mΩ silicon carbide MOSFETs have been shipped on a small scale in the field of photovoltaics and charging piles.

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃ (mΩ)	R_DS(on)@T_j=175℃ (mΩ)	T_{j (max)} (℃)	Package
SMS1200008X	Evaluation	SiC MOSFET Discrete device	Industry	1200	223	8	15	175	TO247-4L Plus
AMS0750011B	Active	SiC MOSFET Bare die	Automotive	1200	142	11	17	175	Bare die
AMS0750011V	Evaluation	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	SAPKG-9L
AMS0750011M	Active	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	TO247-4L
SMS0650065B	Active	SiC MOSFET Bare die	Industry	650	41	65	80	175	Bare die
SMS0650065M	Active	SiC MOSFET Discrete device	Industry	650	41	65	80	175	TO247-4L
SMS1200040B2	Evaluation	SiC MOSFET Bare die	Industry	1200	48	40	66	175	Bare die
AMS1200040B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	48	40	66	175	Bare die
AMS1200040M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	48	40	66	175	TO247-4L
SMS1200040M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	48	40	66	175	TO247-4L
AMS1200075P	Active	SiC MOSFET Discrete device	Automotive	1200	35	75	100	175	TO263-7L
AMS1200075B	Active	SiC MOSFET Bare die	Automotive	1200	41	75	105	175	Bare die
AMS1200075K	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-3L
AMS1200075M	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-4L
SMS1200075M	Active	SiC MOSFET Discrete device	Industry	1200	41	75	105	175	TO247-4L
AMS1200060B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	33	60	112	175	Bare die
AMS1200060V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	SAPKG-9L
AMS1200060M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	TO247-4L
SMS1200032B2	Evaluation	SiC MOSFET Bare die	Industry	1200	58	32	48	175	Bare die
SMS1200032M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	58	32	48	175	TO247-4L
AMS1200032M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	TO247-4L
AMS1200032B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	58	32	48	175	Bare die
SMS1200032B	Active	SiC MOSFET Bare die	Industry	1200	77	32	45	175	Bare die
AMS1200032B	Active	SiC MOSFET Bare die	Automotive	1200	77	32	45	175	Bare die
AMS1200032V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	SAPKG-9L
SMS1200032MA	Evaluation	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4LA
AMS1200032M	Active	SiC MOSFET Discrete device	Automotive	1200	77	32	45	175	TO247-4L
SMS1200032M	Active	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4L
SMS1200020B	Active	SiC MOSFET Bare die	Industry	1200	111	20	37	175	Bare die
SMS1200020M	Active	SiC MOSFET Discrete device	Industry	1200	111	20	37	175	TO247-4L
AMS1200018B	Active	SiC MOSFET Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200018MA	Evaluation	SiC MOSFET Discrete device	Automotive	1200	124	18	30	175	TO247-4LA
AMS1200013B3	Active	SiC MOSFET Bare die	Automotive	1200	160	13	18	175	Bare die
AMS1200013M3	Evaluation	SiC MOSFET Discrete device	Automotive	1200	160	13	18	175	TO247-4L
SMS1701000B	Active	SiC MOSFET Bare die	Industry	1700	6.8	1000	1500	175	Bare die
SMS1701000K	Active	SiC MOSFET Discrete device	Industry	1700	6.8	1000	1500	175	TO247-3L
AMS0650050B	Active	SiC MOSFET Bare die	Automotive	650	47	50	62	175	Bare die
AMS0650050B2	Evaluation	SiC MOSFET Bare die	Automotive	650	44	50	66	175	Bare die
SMS0650050Y	Evaluation	SiC MOSFET Discrete device	Industry	650	47	50	62	175	TOLL
AMS0650050P	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO263-7L
AMS0650050V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	44	50	66	175	SAPKG-9L
AMS0650050V	Evaluation	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	SAPKG-9L
AMS0650050M	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO247-4L
AMS0650035B	Active	SiC MOSFET Bare die	Automotive	650	60	35	49	175	Bare die
SMS0650035Y	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TOLL
SMS0650035P	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TO263-7L
AMS0650035V	Evaluation	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	SAPKG-9L
AMS0650035M	Active	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	TO247-4L
AMS0650027B2	Evaluation	SiC MOSFET Bare die	Automotive	650	81	27	32	175	Bare die
SMS0650027B	Active	SiC MOSFET Bare die	Industry	650	78	27	49	175	Bare die
AMS0650027V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	81	27	32	175	SAPKG-9L
AMS0650027V	Evaluation	SiC MOSFET Discrete device	Automotive	650	78	27	49	175	SAPKG-9L
SMS0650027P	Evaluation	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO263-7L
SMS0650027M	Active	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO247-4L