SiC MOSFET-Sanan Semiconductor

Introduction

Excellent switching and high temperature DC characteristics

Silicon carbide MOSFETs are core components of next-generation energy conversion systems, enabling key system benefits such as miniaturization, lighter weight and higher integration.

Sanan Semiconductor has integrated global scientific research wisdom and local mass production experience in the development of Silicon Carbide MOSFET technology. Manufacturing process challenges, such as low resistance ohmic contacts, appropriately activated dopants in ion implantation/annealing, and optimized gate oxidation, have all been addressed.

By independently mastering many core technologies, Sanan Semiconductor's automotive-grade 1200V/16mΩ silicon carbide MOSFETs have overcome reliability issues and passed AEC-Q101 certification, and have been validated in the modules of key new energy automotive customers; and industrial-grade 1700V/1Ω and 1200V/32mΩ silicon carbide MOSFETs have been shipped on a small scale in the field of photovoltaics and charging piles.

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃ (mΩ)	R_DS(on)@T_j=175℃ (mΩ)	T_{j (max)} (℃)	Package
AMS1200013B	Evaluation	SiC MOSFETs Bare die	Automotive	1200	160	10	18	175	Bare die
SMS0750011B	Evaluation	SiC MOSFETs Bare die	Industry	750	124	11	17	175	TO247-4L
SMS0750011M	Evaluation	SiC MOSFETs Discrete device	Industry	750	124	11	17	175	TO247-4L
SMS1200016M	Active	SiC MOSFETs Discrete device	Industry	1200	132	16	27	175	TO247-4L
SMS0650065B	Evaluation	SiC MOSFETs Bare die	Industry	650	41	65	80	175	Bare die
AMS0650050B	Active	SiC MOSFETs Bare die	Automotive	650	45	50	62	175	Bare die
SMS0650027B	Active	SiC MOSFETs Bare die	Industry	650	83	27	34	175	Bare die
AMS0650035B	Active	SiC MOSFETs Bare die	Automotive	650	60	35	49	175	Bare die
AMS1200075B	Active	SiC MOSFETs Bare die	Automotive	1200	41	75	105	175	Bare die
SMS1200075B	Evaluation	SiC MOSFETs Bare die	Industry	1200	35	75	115	175	Bare die
SMS1200032B	Active	SiC MOSFETs Bare die	Industry	1200	77	32	45	175	Bare die
SMS1200020B	Active	SiC MOSFETs Bare die	Industry	1200	111	20	37	175	Bare die
AMS1200018B	Active	SiC MOSFETs Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200016B	Active	SiC MOSFETs Bare die	Automotive	1200	132	16	27	175	Bare die
SMS1701000B	Active	SiC MOSFETs Bare die	Industry	1700	6.8	1000	1500	175	Bare die
SMS1701000K	Active	SiC MOSFETs Discrete device	Industry	1700	6.8	1000	1500	175	TO247-3L
SMS0650065M	Evaluation	SiC MOSFETs Discrete device	Industry	650	41	65	80	175	TO247-4L
AMS0650050P	Evaluation	SiC MOSFETs Discrete device	Automotive	650	42	50	62	175	TO263-7L
AMS0650050M	Active	SiC MOSFETs Discrete device	Automotive	650	45	50	62	175	TO247-4L
AMS0650035M	Active	SiC MOSFETs Discrete device	Automotive	650	60	35	49	175	TO247-4L
SMS0650027M	Active	SiC MOSFETs Discrete device	Industry	650	83	27	34	175	TO247-4L
AMS1200075P	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO263-7L
AMS1200075K	Active	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO247-3L
AMS1200075M	Active	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO247-4L
SMS1200075M	Evaluation	SiC MOSFETs Discrete device	Industry	1200	41	75	105	175	TO247-4L
SMS1200032MA	Evaluation	SiC MOSFETs Discrete device	Industry	1200	77	32	45	175	TO247-4LA
AMS1200032M	Active	SiC MOSFETs Discrete device	Automotive	1200	77	32	45	175	TO247-4L
SMS1200032M	Active	SiC MOSFETs Discrete device	Industry	1200	77	32	45	175	TO247-4L
SMS1200020M	Active	SiC MOSFETs Discrete device	Industry	1200	111	20	37	175	TO247-4L