Sanan Semiconductor contributed to the IEEE ESTC 2024 in Berlin (September 2024) with the paper "Adaptive Artificial Neural Networks for Power Loss Prediction in SiC MOSFETs." Presented by Giovanni Dinuzzo, Application Engineer at Sanan Semiconductor, this study investigates the use of machine learning techniques to predict conduction and switching losses in SiC MOSFETs. In detail, advanced artificial neural networks are trained and tested on experimental data under various thermal and electrical conditions, showcasing a superior performance over traditional methods. Accurate power loss estimation is especially crucial for precise performance evaluation and accelerating new product pre-design. This innovative approach highlights Sanan Semiconductor's commitment to advancing semiconductor technology and driving progress in the power electronics industry.
The complete research paper is available in IEEE Xplore at: https://ieeexplore.ieee.org/document/10712117.
