碳化硅MOSFET-三安半导体

简介

产品

卓越性能，三安制造平台

碳化硅 MOSFET 作为下一代能量转换系统的核心部件，凭借优异的开关特性和高温直流表现，为系统设计带来小型化、轻量化及高集成度等显著优势。

湖南三安半导体依托先进技术与规模化制造经验，严格遵循行业标准，打造高性能碳化硅 MOSFET 产品系列。在制造工艺上，三安通过成熟的量产技术，实现了低电阻欧姆接触、优化的掺杂剂激活工艺以及稳定的栅极氧化处理，确保产品的一致性与可靠性。

目前，三安标准制造平台已通过多项严苛测试：

车规级 1200V 16mΩ 碳化硅 MOSFET 通过 AEC-Q101 认证，已在新能源汽车客户模块验证中；

工规级 1700V 1Ω 与 1200V 32mΩ 碳化硅 MOSFET 已在光伏及充电桩领域实现稳定出货，性能获客户认可。

三安以规模化制造能力为核心，持续为各领域提供高标准的碳化硅 MOSFET 解决方案。

产品

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃ (mΩ)	R_DS(on)@T_j=175℃ (mΩ)	T_{j (max)} (℃)	Package
SMS1200008X	Evaluation	SiC MOSFET Discrete device	Industry	1200	223	8	15	175	TO247-4L Plus
AMS0750011B	Active	SiC MOSFET Bare die	Automotive	1200	142	11	17	175	Bare die
AMS0750011V	Evaluation	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	SAPKG-9L
AMS0750011M	Active	SiC MOSFET Discrete device	Automotive	750	142	11	17	175	TO247-4L
SMS0650065B	Active	SiC MOSFET Bare die	Industry	650	41	65	80	175	Bare die
SMS0650065M	Active	SiC MOSFET Discrete device	Industry	650	41	65	80	175	TO247-4L
SMS1200040B2	Evaluation	SiC MOSFET Bare die	Industry	1200	48	40	66	175	Bare die
AMS1200040B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	48	40	66	175	Bare die
AMS1200040M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	48	40	66	175	TO247-4L
SMS1200040M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	48	40	66	175	TO247-4L
AMS1200075P	Active	SiC MOSFET Discrete device	Automotive	1200	35	75	100	175	TO263-7L
AMS1200075B	Active	SiC MOSFET Bare die	Automotive	1200	41	75	105	175	Bare die
AMS1200075K	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-3L
AMS1200075M	Active	SiC MOSFET Discrete device	Automotive	1200	41	75	105	175	TO247-4L
SMS1200075M	Active	SiC MOSFET Discrete device	Industry	1200	41	75	105	175	TO247-4L
AMS1200060B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	33	60	112	175	Bare die
AMS1200060V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	SAPKG-9L
AMS1200060M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	33	60	112	175	TO247-4L
SMS1200032B2	Evaluation	SiC MOSFET Bare die	Industry	1200	58	32	48	175	Bare die
SMS1200032M2	Evaluation	SiC MOSFET Discrete device	Industry	1200	58	32	48	175	TO247-4L
AMS1200032M2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	TO247-4L
AMS1200032B2	Evaluation	SiC MOSFET Bare die	Automotive	1200	58	32	48	175	Bare die
SMS1200032B	Active	SiC MOSFET Bare die	Industry	1200	77	32	45	175	Bare die
AMS1200032B	Active	SiC MOSFET Bare die	Automotive	1200	77	32	45	175	Bare die
AMS1200032V2	Evaluation	SiC MOSFET Discrete device	Automotive	1200	58	32	48	175	SAPKG-9L
SMS1200032MA	Evaluation	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4LA
AMS1200032M	Active	SiC MOSFET Discrete device	Automotive	1200	77	32	45	175	TO247-4L
SMS1200032M	Active	SiC MOSFET Discrete device	Industry	1200	77	32	45	175	TO247-4L
SMS1200020B	Active	SiC MOSFET Bare die	Industry	1200	111	20	37	175	Bare die
SMS1200020M	Active	SiC MOSFET Discrete device	Industry	1200	111	20	37	175	TO247-4L
AMS1200018B	Active	SiC MOSFET Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200018MA	Evaluation	SiC MOSFET Discrete device	Automotive	1200	124	18	30	175	TO247-4LA
AMS1200013B3	Active	SiC MOSFET Bare die	Automotive	1200	160	13	18	175	Bare die
AMS1200013M3	Evaluation	SiC MOSFET Discrete device	Automotive	1200	160	13	18	175	TO247-4L
SMS1701000B	Active	SiC MOSFET Bare die	Industry	1700	6.8	1000	1500	175	Bare die
SMS1701000K	Active	SiC MOSFET Discrete device	Industry	1700	6.8	1000	1500	175	TO247-3L
AMS0650050B	Active	SiC MOSFET Bare die	Automotive	650	47	50	62	175	Bare die
AMS0650050B2	Evaluation	SiC MOSFET Bare die	Automotive	650	44	50	66	175	Bare die
SMS0650050Y	Evaluation	SiC MOSFET Discrete device	Industry	650	47	50	62	175	TOLL
AMS0650050P	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO263-7L
AMS0650050V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	44	50	66	175	SAPKG-9L
AMS0650050V	Evaluation	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	SAPKG-9L
AMS0650050M	Active	SiC MOSFET Discrete device	Automotive	650	47	50	62	175	TO247-4L
AMS0650035B	Active	SiC MOSFET Bare die	Automotive	650	60	35	49	175	Bare die
SMS0650035Y	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TOLL
SMS0650035P	Evaluation	SiC MOSFET Discrete device	Industry	650	60	35	49	175	TO263-7L
AMS0650035V	Evaluation	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	SAPKG-9L
AMS0650035M	Active	SiC MOSFET Discrete device	Automotive	650	60	35	49	175	TO247-4L
AMS0650027B2	Evaluation	SiC MOSFET Bare die	Automotive	650	81	27	32	175	Bare die
SMS0650027B	Active	SiC MOSFET Bare die	Industry	650	78	27	49	175	Bare die
AMS0650027V2	Evaluation	SiC MOSFET Discrete device	Automotive	650	81	27	32	175	SAPKG-9L
AMS0650027V	Evaluation	SiC MOSFET Discrete device	Automotive	650	78	27	49	175	SAPKG-9L
SMS0650027P	Evaluation	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO263-7L
SMS0650027M	Active	SiC MOSFET Discrete device	Industry	650	78	27	49	175	TO247-4L