碳化硅MOSFET-三安半导体

简介

产品

优异的开关和高温直流特性

碳化硅 MOSFET 是下一代能量转换系统的核心部件，实现了关键的系统优势，例如小型化、更轻的重量和更高的集成度。

湖南三安半导体整合全球科研智慧和本地大规模量产经验，进行碳化硅 MOSFET 技术研发，制造工艺的挑战，如低电阻欧姆接触、离子注入/退火中适当激活的掺杂剂以及优化的栅极氧化等都已得到解决。

通过自主掌握众多核心技术，湖南三安半导体的车规级 1200V/16mΩ 碳化硅 MOSFET 攻克了可靠性问题，并通过 AEC-Q101 认证，已在重点新能源汽车客户模块验证中；工规级 1700V/1Ω 和 1200V/32mΩ 碳化硅 MOSFET 已在光伏及充电桩领域小规模出货。

产品

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃ (mΩ)	R_DS(on)@T_j=175℃ (mΩ)	T_{j (max)} (℃)	Package
AMS1200013B	Evaluation	SiC MOSFETs Bare die	Automotive	1200	160	10	18	175	Bare die
SMS0750011B	Evaluation	SiC MOSFETs Bare die	Industry	750	124	11	17	175	TO247-4L
SMS0750011M	Evaluation	SiC MOSFETs Discrete device	Industry	750	124	11	17	175	TO247-4L
SMS1200016M	Active	SiC MOSFETs Discrete device	Industry	1200	132	16	27	175	TO247-4L
SMS0650065B	Evaluation	SiC MOSFETs Bare die	Industry	650	41	65	80	175	Bare die
AMS0650050B	Active	SiC MOSFETs Bare die	Automotive	650	45	50	62	175	Bare die
SMS0650027B	Active	SiC MOSFETs Bare die	Industry	650	83	27	34	175	Bare die
AMS0650035B	Active	SiC MOSFETs Bare die	Automotive	650	60	35	49	175	Bare die
AMS1200075B	Active	SiC MOSFETs Bare die	Automotive	1200	41	75	105	175	Bare die
SMS1200075B	Evaluation	SiC MOSFETs Bare die	Industry	1200	35	75	115	175	Bare die
SMS1200032B	Active	SiC MOSFETs Bare die	Industry	1200	77	32	45	175	Bare die
SMS1200020B	Active	SiC MOSFETs Bare die	Industry	1200	111	20	37	175	Bare die
AMS1200018B	Active	SiC MOSFETs Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200016B	Active	SiC MOSFETs Bare die	Automotive	1200	132	16	27	175	Bare die
SMS1701000B	Active	SiC MOSFETs Bare die	Industry	1700	6.8	1000	1500	175	Bare die
SMS1701000K	Active	SiC MOSFETs Discrete device	Industry	1700	6.8	1000	1500	175	TO247-3L
SMS0650065M	Evaluation	SiC MOSFETs Discrete device	Industry	650	41	65	80	175	TO247-4L
AMS0650050P	Evaluation	SiC MOSFETs Discrete device	Automotive	650	42	50	62	175	TO263-7L
AMS0650050M	Active	SiC MOSFETs Discrete device	Automotive	650	45	50	62	175	TO247-4L
AMS0650035M	Active	SiC MOSFETs Discrete device	Automotive	650	60	35	49	175	TO247-4L
SMS0650027M	Active	SiC MOSFETs Discrete device	Industry	650	83	27	34	175	TO247-4L
AMS1200075P	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO263-7L
AMS1200075K	Active	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO247-3L
AMS1200075M	Active	SiC MOSFETs Discrete device	Automotive	1200	41	75	105	175	TO247-4L
SMS1200075M	Evaluation	SiC MOSFETs Discrete device	Industry	1200	41	75	105	175	TO247-4L
SMS1200032MA	Evaluation	SiC MOSFETs Discrete device	Industry	1200	77	32	45	175	TO247-4LA
AMS1200032M	Active	SiC MOSFETs Discrete device	Automotive	1200	77	32	45	175	TO247-4L
SMS1200032M	Active	SiC MOSFETs Discrete device	Industry	1200	77	32	45	175	TO247-4L
SMS1200020M	Active	SiC MOSFETs Discrete device	Industry	1200	111	20	37	175	TO247-4L